Paper
6 May 1994 Electron-hole scattering in p-GaAs
Rosana Rodrigues, P. Buchberger, Ralph A. Hoepfel
Author Affiliations +
Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175889
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We report the direct experimental determination of the energy loss rate of photoexcited minority electrons in highly doped p-GaAs. At 300 K, the luminescence spectra are measured with high time-resolution (approximately 100 fs, using up-conversion) after low excitation (n < 1017 cm-3) of additional electron-hole pairs. The hole concentration due to doping is by two orders of magnitude higher, which ensures that the hole energy distribution stays thermal at 300 K. Within the first picosecond after excitation a rapid change of the luminescence spectra is observed, which can be clearly attributed to the energy distribution of the photoexcited minority electrons. The electron temperature decreases within 500 fs from 900 K down to less than 350 K. The energy loss rate per electron exceeds the energy loss rate by electron-phonon interaction by almost an order of magnitude. Indications of nonthermal distributions in the temporal range of 0 to 200 fs are present.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rosana Rodrigues, P. Buchberger, and Ralph A. Hoepfel "Electron-hole scattering in p-GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175889
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrons

Luminescence

Scattering

Picosecond phenomena

Gallium arsenide

Energy transfer

Phonons

RELATED CONTENT

Cooling Of Hot Electron-Hole-Plasmas In GaAs Quantum Wells
Proceedings of SPIE (August 22 1988)
Electron-Hole Interaction In GaAs
Proceedings of SPIE (August 22 1988)
Intervalley Scattering In GaAs
Proceedings of SPIE (August 22 1988)

Back to Top