Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim H. Wolter; Jos E. M. Haverkort; Peter Hendriks; E. A. E. Zwaal

doi:10.1117/12.175901

6 May 1994 Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim H. Wolter, Jos E. M. Haverkort, Peter Hendriks, E. A. E. Zwaal

Author Affiliations +

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175901
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al_xGa_1-xAs, injection of electrons from the contacts into the Al_xGa_1-xAs layer opens a conductive channel in the Al_xGa_1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the Al_xGa_1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

Citation Download Citation

Joachim H. Wolter, Jos E. M. Haverkort, Peter Hendriks, and E. A. E. Zwaal "Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175901

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