Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT

Glenn H. Westphal; Luigi Colombo; Jeff M. Anderson

doi:10.1117/12.179679

13 July 1994 Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT

Glenn H. Westphal, Luigi Colombo, Jeff M. Anderson

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179679
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Liquid phase epitaxy (LPE) of (Hg,Cd)Te (MCT) is the technique of choice for the preparation of the materials used for high performance focal plane arrays. Its successful development requires the development of advanced sensors and process controls. We detail here progress on the application of four sensor technologies to the LPE process for growth of MCT layers from Te rich melts on CdZnTe substrates. These include: (1) electron beam microprobe/wavelength dispersive x-ray analysis (WDX) for the rapid measurement of film composition immediately after growth; (2) an RTD based precision temperature control system that controls the melt temperature to better than +/- 0.005 degree(s)C and the Hg reservoir temperature to better than +/- 0.020 degree(s)C; (3) UV/visible optical absorption spectroscopy for the determination of the Hg partial pressure over the melt; and (4) CCD imaging for the detection of the liquid temperature of the LPE growth solution. The impact of each of the sensors on process yield is discussed. The application of the CCD camera to Hg rich high pressure LPE growth is also briefly mentioned.

Citation Download Citation

Glenn H. Westphal, Luigi Colombo, and Jeff M. Anderson "Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179679

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