Highly producible HgCdTe molecular beam epitaxy growth technique using radiational substrate heating

Tokuhito Sasaki; Naoki Oda

doi:10.1117/12.179684

13 July 1994 Highly producible HgCdTe molecular beam epitaxy growth technique using radiational substrate heating

Tokuhito Sasaki, Naoki Oda

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179684
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Utilizing either the gallium or indium free substrate mounting technique is desirable for producing large area and high quality HgCdTe epitaxial layers. This paper reports that a conventional substrate holder was modified to handle radiational heating. This modification enables substrate rotation to obtain better layer uniformity and realizes reduction in the amount of growth process time. This paper also describes substrate temperature behavior during HgCdTe epitaxy. From the growth initiation to about 2 micrometers -thick HgCdTe growth, the temperature increase was confirmed as being due to absorption of thermal radiation from heated cells and the substrate heater. For further growth, radiation cooling occurred as well. The latter behavior was corrected by the infrared pyrometer. Crystallinity of the epilayer grown by radiational heating was comparable to that of the epilayer grown by conventional thermal conductance heating. Using this technique, both the reduction in process time and the epilayer uniformity of 0.5%((Delta) x/x) over a 2 inch wafer were achieved.

Citation Download Citation

Tokuhito Sasaki and Naoki Oda "Highly producible HgCdTe molecular beam epitaxy growth technique using radiational substrate heating", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179684

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