Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

Shinichi Kobayashi; Hiroyuki Kojima; Yoshio Saito

doi:10.1117/12.174678

1 May 1994 Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

Shinichi Kobayashi, Hiroyuki Kojima, Yoshio Saito

Proceedings Volume 2259, XVI International Symposium on Discharges and Electrical Insulation in Vacuum; (1994) https://doi.org/10.1117/12.174678
Event: XVI International Symposium on Discharges and Electrical Insulation in Vacuum, 1994, Moscow-St. Petersburg, Russian Federation

Abstract

An ion beam sputtering technique was used to clean the electrode surfaces of vacuum gaps. Ions of the sputtering gas were irradiated by means of an ion gun in a vacuum chamber attached to a breakdown measurement chamber. By providing in situ ion-beam sputter cleaning, this system makes it possible to make measurements free from contamination due to exposure to the air. The sputtering gas was He or Ar, and the electrodes were made of oxygen-free copper (purity more than 99.96%). An impulse voltage with the wave form of 64/700 microsecond(s) was applied to the test gap, and the pressure in the breakdown measurement chamber at the beginning of breakdown tests was 1.3 X 10^-8 Pa. These experiments showed that ion-beam sputter cleaning results in higher breakdown fields after a repetitive breakdown conditioning procedure, and that He is more effective in improving hold- off voltages after the conditioning (under the same ion current density, the breakdown field was 300 MV/m for He sputtering and 200 MV/m for Ar sputtering). The breakdown fields at the first voltage application after the sputtering cleaning, on the other hand, were not improved.

Citation Download Citation

Shinichi Kobayashi, Hiroyuki Kojima, and Yoshio Saito "Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps", Proc. SPIE 2259, XVI International Symposium on Discharges and Electrical Insulation in Vacuum, (1 May 1994); https://doi.org/10.1117/12.174678

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