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Ultrathin (< 5 nm) dielectric films have been grown on (100) silicon using rapid thermal processing (RTP) in a nitric oxide (NO) ambient. The chemical composition was studied using x-ray photoelectron spectroscopy (XPS). Interface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have also been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of much stronger and large numbers of Si-N bonds in both the bulk of the dielectric films an in Si-SiO2 interface region.
Ze-Qiang Yao,H. Barry Harrison,Sima Dimitrijev, andY. T. Yeow
"High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186065
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Ze-Qiang Yao, H. Barry Harrison, Sima Dimitrijev, Y. T. Yeow, "High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing," Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186065