Heteroepitaxy on high-quality GaAs on Si for optical interconnection on Si chip

Masao Tamura; J. Palmer; T. Yodo; T. Saitoh

doi:10.1117/12.206302

5 April 1995 Heteroepitaxy on high-quality GaAs on Si for optical interconnection on Si chip

Masao Tamura, J. Palmer, T. Yodo, T. Saitoh

Proceedings Volume 2400, Optoelectronic Interconnects III; (1995) https://doi.org/10.1117/12.206302
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Recent progress concerning GaAs on Si technology is discussed from the viewpoint of how to suppress the threading dislocation density in GaAs layers to the level of 10⁴cm² on the basis of recently obtained results. In particular, we consider the effects of new approaches for realizing two-dimensional growth, new materials of buffer layers and insertion layers, post-growth annealing, high energy ion implantation and the confinement of growth areas on the reduction of threading dislocation generation and propagation.

Citation Download Citation

Masao Tamura, J. Palmer, T. Yodo, and T. Saitoh "Heteroepitaxy on high-quality GaAs on Si for optical interconnection on Si chip", Proc. SPIE 2400, Optoelectronic Interconnects III, (5 April 1995); https://doi.org/10.1117/12.206302

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