Realization of a high-aperture ratio in a novel 2.8-inch diagonal VGA thin film diode (TFD)-R projection display

Johannes G.R. van Mourik; Robert A. Hartman; R. van der Kloet; F. Leenhouts

doi:10.1117/12.205884

7 April 1995 Realization of a high-aperture ratio in a novel 2.8-inch diagonal VGA thin film diode (TFD)-R projection display

Johannes G.R. van Mourik, Robert A. Hartman, R. van der Kloet, F. Leenhouts

Author Affiliations +

Proceedings Volume 2407, Projection Displays; (1995) https://doi.org/10.1117/12.205884
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States

Abstract

Active Matrix Liquid Crystal Displays used for projection applications are commonly manufactured in Thin Film Transistor (TFT) technology using amorphous or poly silicon. Displays available on the market exhibit an aperture ratio of about 30%. The rather low aperture ratio is due to the presence of column and row electrodes, a storage capacitor and a black mask. This black mask also has to hide light leakage due to disclination lines caused by lateral electrical fields. In this paper it will be shown that the TFD-R technology offers several advantages over the TFT technology with respect to the aperture ratio and the elimination of disclination lines resulting from lateral fields. On the basis of the TFD-R technology LCDs have been developed exhibiting a high aperture ratio. The high luminance capability of TFD-R LCD based projectors was demonstrated by comparing a projector provided with 2.8' TFT LCDs and the same projector provided with 2.8' TFD-R LCDs.

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Johannes G.R. van Mourik, Robert A. Hartman, R. van der Kloet, and F. Leenhouts "Realization of a high-aperture ratio in a novel 2.8-inch diagonal VGA thin film diode (TFD)-R projection display", Proc. SPIE 2407, Projection Displays, (7 April 1995); https://doi.org/10.1117/12.205884

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