In-situ wafer curvature measurements during rapid thermal annealing of Si(100) wafers

J. Hans F. Jongste; Tom Oosterlaken; G. C.J. Bart; Guido C.A.M. Janssen; Sybrand Radelaar

doi:10.1117/12.221306

19 September 1995 In-situ wafer curvature measurements during rapid thermal annealing of Si(100) wafers

J. Hans F. Jongste, Tom Oosterlaken, G. C.J. Bart, Guido C.A.M. Janssen, Sybrand Radelaar

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221306
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

During Rapid Thermal Annealing (RTA) of silicon wafers a nonuniform temperature distribution may exist across the wafer caused by a variation of the radiation flux. Due to the thermal gradient, differences in thermal expansion introduce thermal stresses in the material. In a modified RTA system the deformation originating from the thermal stress was monitored by measurement of the wafer curvature using the reflection of a laser beam off the wafer surface. The measurements were performed in real-time by a dedicated image processing system. Silicon wafers were radiatively heated to approximately equals 850 degree(s)C for 90 seconds by halogen lamps at a constant temperature of approximately equals 1740 degree(s)C. The results show that during the complete RTA cycle wafers are in a deformed state. In particular, the deformation is largest during the heating and cooling transients. It is shown that the deformation is reduced by application of radiation shielding.

Citation Download Citation

J. Hans F. Jongste, Tom Oosterlaken, G. C.J. Bart, Guido C.A.M. Janssen, and Sybrand Radelaar "In-situ wafer curvature measurements during rapid thermal annealing of Si(100) wafers", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221306

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