Paper
4 October 1995 New developments of resonant acousto-optics in semiconductors
Jacques Sapriel, P. Renosi, P. Le Berre
Author Affiliations +
Proceedings Volume 2643, Acousto-Optics and Applications II; (1995) https://doi.org/10.1117/12.222752
Event: Acousto-Optics and Applications VI, 1995, Gdansk-Jurata, Poland
Abstract
Optical, acoustical, and near-resonance acousto-optical properties of GaAs and InP are investigated and several high performance devices are achieved using these crystals. It is shown that this study can be extended to other direct-gap semiconductors of III-V and II-VI elements to match the optical sources in a large range of available light wavelengths.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacques Sapriel, P. Renosi, and P. Le Berre "New developments of resonant acousto-optics in semiconductors", Proc. SPIE 2643, Acousto-Optics and Applications II, (4 October 1995); https://doi.org/10.1117/12.222752
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Cited by 4 scholarly publications.
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KEYWORDS
Gallium arsenide

Semiconductors

Acousto-optics

Crystals

Acoustics

Polarization

Signal attenuation

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