Paper
18 September 1996 Measurement of the strain field in a micrometer-sized region at a notch tip
Edoardo Mazza, Jurg Dual, C. R. Musil, Gaudenz Danuser, Martin Vetterli
Author Affiliations +
Proceedings Volume 2782, Optical Inspection and Micromeasurements; (1996) https://doi.org/10.1117/12.250741
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France
Abstract
In single crystal silicon microstructures produced by anisotropic etching, sharp notches are present. In order to investigate the material behavior and to define design parameters, measurements of the strain field in a micrometer-sized region at the notch tip are performed. The microstructure is loaded by bending and the strain is estimated by analyzing images obtained with a scanning ion microscope. The observed region has been previously marked with an array of square boxes spaced 500 nm center to center. The boxes are drawn by focused ion beam implantation. The image analysis is realized with a new algorithm with high superresolution capabilities which provides an estimation for a strain component and its standard deviation. The so-called `near field solution' for the infinitesimal strain field at the notch tip can be calculated analytically. The excellent agreement of the experimental values with the analytical as well as numerical calculations confirms the validity of the continuum mechanics approach for the mechanical characterization of micrometer-sized structures.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edoardo Mazza, Jurg Dual, C. R. Musil, Gaudenz Danuser, and Martin Vetterli "Measurement of the strain field in a micrometer-sized region at a notch tip", Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); https://doi.org/10.1117/12.250741
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KEYWORDS
Image analysis

Anisotropic etching

Crystals

Ion beams

Ions

Microscopes

Near field

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