Growth and optical properties of Bi2Ti2O7 single-crystal thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition

Hong Wang; Z. H. Wang; M. Wang; S. X. Shang

doi:10.1117/12.252974

3 October 1996 Growth and optical properties of Bi2Ti2O7 single-crystal thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition

Hong Wang, Z. H. Wang, M. Wang, S. X. Shang

Author Affiliations +

Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996) https://doi.org/10.1117/12.252974
Event: Photonics China '96, 1996, Beijing, China

Abstract

In this paper we report the epitaxial growth of Bi₂Ti₂O₇ thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition technique (APMOCVD). The source materials used were triphenyl bismuth [Bi(C₆H₅)₃] and titanium isopropoxied. The substrate temperature was as low as 500 degrees Celsius. The as-grown Bi₂Ti₂O₇ thin films were high quality single- crystal film with (111) orientation. The transmittance of Bi₂Ti₂O₇ film is between 80% - 90% in the wavelength range 380 - 800 nm, and the absorption edge is at 310 nm. The dielectric constant ((epsilon) ) and loss tangent (tan(delta) ) were found to be 120 and 0.01, respectively, at room temperature. The resistivity of Bi₂Ti₂O₇ film higher than 1 multiplied by 10¹² (Omega) .cm under the applied voltage from minus 5 V to plus 5 V.

Citation Download Citation

Hong Wang, Z. H. Wang, M. Wang, and S. X. Shang "Growth and optical properties of Bi2Ti2O7 single-crystal thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252974

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