Paper
1 April 1997 Ellipsometric studies of the effect of a metal island structure on the optic properties of a semiconductor surface
Nikolas L. Dmitruk, Lubov A. Zabashta
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Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271835
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland
Abstract
The ellipsometry method is used to study the optic properties of the real gold-doped gallium arsenide surface. The ellipsometric angles (Psi) and (Delta) were measured with the LEF-3M laser ellipsometer in the range of angles (curly phi) equals 45 degrees-85 degrees to an accuracy 0.5. The optical constants and the interfacial layer thickness were calculated using the ELLA application package. The structure model proposed for the metal-doped gallium arsenide surface takes into account the specific deposition of the dopant and the dopant distribution over the surface. The ellipsometry data are compared with those obtained by electron microscopy. The ellipsometry method is shown to be useful in the estimation of the degree of coating and the doped surface morphology.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolas L. Dmitruk and Lubov A. Zabashta "Ellipsometric studies of the effect of a metal island structure on the optic properties of a semiconductor surface", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271835
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