Paper
20 February 1998 General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice
Shanqing Jiao, Guangzuo Jiang, Shujuan Wang, Benli Yang
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300660
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shanqing Jiao, Guangzuo Jiang, Shujuan Wang, and Benli Yang "General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300660
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KEYWORDS
Superlattices

Aluminum

Quantum wells

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