Interface electrical characteristics of passivation films on HgCdTe

X. C. Zhang; Guozhen Zheng; Shaoling Guo; Yongsheng Gui; Junhao Chu

doi:10.1117/12.300664

20 February 1998 Interface electrical characteristics of passivation films on HgCdTe

X. C. Zhang, Guozhen Zheng, Shaoling Guo, Yongsheng Gui, Junhao Chu

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300664
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by capacitance-voltage (CV) characteristics of metal-insulator- semiconductor (MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge approximately -4.0 X 10¹⁰ cm^-2, density of slow state approximately 5.1 X 10¹⁰cm^-2, density of fast interface state approximately 2.7 X 10¹¹cm^-2eV^-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film//HgCdTe interface.

Citation Download Citation

X. C. Zhang, Guozhen Zheng, Shaoling Guo, Yongsheng Gui, and Junhao Chu "Interface electrical characteristics of passivation films on HgCdTe", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300664

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