Paper
20 February 1998 Microstructure and fractal growth mechanism of sputtered films of Bi2Sr2Ca1Cu2O7-x on Si substrates
Wensheng Qian, Liu Rong, Tongli Wei
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300695
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Bi2Sr2Ca1Cu2O7-x(BSCCO) superconducting films were deposited on Si substrates with buffer layers of Y- stabilized ZrO2 films (YSZ) by magnetic sputtering. The critical temperature (Tc) of BSCCO film on YSZ/Si was 82 K. The microstructure of BSCCO/YSZ/Si was studied by scanning electronic microscope (SEM) and atom force microscope (AFM), the growing model of spiral nucleation was verified. Fractal images were found in the micrographs, and their growth mechanism was presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wensheng Qian, Liu Rong, and Tongli Wei "Microstructure and fractal growth mechanism of sputtered films of Bi2Sr2Ca1Cu2O7-x on Si substrates", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300695
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KEYWORDS
Fractal analysis

Silicon

Microscopes

Scanning electron microscopy

Bismuth

Calcium

Copper

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