Generation-recombination noise in multiple quantum well infrared photodetectors

Maxim Ershov

doi:10.1117/12.344548

7 April 1999 Generation-recombination noise in multiple quantum well infrared photodetectors

Maxim Ershov

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344548
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Generation-recombination noise in quantum well infrared photodetectors is considered theoretically. A numerical model and procedure for noise power calculation is proposed. It is shown that the transient response current due to extra charge generation from a QW is not described by a simple exponential model. Transient current is composed of fast and slow components. The autocorrelation coefficient is also non- exponential, having two components with different time scales and amplitudes. The noise power spectral density has a strong frequency dispersion at low frequencies, due to the modulation of the injection current from the emitter. Analytical model for non-equilibrium high-frequency noise is proposed.

Citation Download Citation

Maxim Ershov "Generation-recombination noise in multiple quantum well infrared photodetectors", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344548

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