Defect inspection on CMP process and its application

Minori N. Noguchi; Yoshimasa Oshima; Hidetoshi Nishiyama; Kenji Watanabe; Aritoshi Sugimoto

doi:10.1117/12.350865

14 June 1999 Defect inspection on CMP process and its application

Minori N. Noguchi, Yoshimasa Oshima, Hidetoshi Nishiyama, Kenji Watanabe, Aritoshi Sugimoto

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350865
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A high-throughput high-sensitivity defect-detection technique has been developed for manufacturing 0.15-0.25- micrometers LSI devices. It incorporates a high-resolution detection systems using multi-channel detectors and a high- resolution imaging system using spatial filtering and collimated focused-beam illumination. A new algorithm called correlated local area statistical threshold enables this technique to achieve a sensitivity of 0.15 micrometers on front- end processes and 0.3 micrometers on back-end processes and a high throughput.

Citation Download Citation

Minori N. Noguchi, Yoshimasa Oshima, Hidetoshi Nishiyama, Kenji Watanabe, and Aritoshi Sugimoto "Defect inspection on CMP process and its application", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350865

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