New approach to correlating overlay and yield

Moshe E. Preil; John S. McCormack

doi:10.1117/12.350808

14 June 1999 New approach to correlating overlay and yield

Moshe E. Preil, John S. McCormack

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350808
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Integrated circuit design rules are defined with a given overlay tolerance, but the exact correlation between measured overlay on product wafers and die yield is notoriously difficult to quantify. Interest in better quantifying this relationship is not merely academic. The ability to shrink the overlay design rule by even a few nanometers would allow more good die to be printed on every product wafer, providing a substantial economic benefit. Conversely, if the actual distribution of overlay errors across a wafer is slightly worse than anticipated in the design rules, the resulting shortfall in yield would be difficult to identify and correct.

Citation Download Citation

Moshe E. Preil and John S. McCormack "New approach to correlating overlay and yield", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350808

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