Paper
11 June 1999 Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist
Jason P. Minter, Matthew F. Ross, William R. Livesay, Selmer S. Wong, Mark E. Narcy, Trey Marlowe
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Abstract
In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason P. Minter, Matthew F. Ross, William R. Livesay, Selmer S. Wong, Mark E. Narcy, and Trey Marlowe "Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350158
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Photoresist materials

Electron beams

Floods

Metals

Photoresist developing

Plasma etching

Image processing

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