Illumination condition and mask bias for 0.15-um pattern with KrF and ArF lithography

Hiroki Tabuchi; Y. Shichijo; N. Oka; N. Takenaka; K. Iguchi

doi:10.1117/12.354327

26 July 1999 Illumination condition and mask bias for 0.15-μm pattern with KrF and ArF lithography

Hiroki Tabuchi, Y. Shichijo, N. Oka, N. Takenaka, K. Iguchi

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354327
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In this paper the optimization of illumination condition and mask bias in semiconductor lithography is reported, in the case of using half-tone mask (HTM) and off-axis illumination (OAI). Its results are to control the line width and to enlarge the common process margin for both isolated and dense 0.18micrometers -0.15micrometers pattern with KrF and ArF lithography. It found that for 0.18micrometers pattern KrF needs every resolution enhancement technology, for example, HTM, OAI and iso/dense optical proximity correction. For 0.15micrometers pattern KrF needs more than 0.65NA additionally. On the other hand ArF needs less than 0.55NA.

Citation Download Citation

Hiroki Tabuchi, Y. Shichijo, N. Oka, N. Takenaka, and K. Iguchi "Illumination condition and mask bias for 0.15-μm pattern with KrF and ArF lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354327

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