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Photomask quality for the next generation processing such as DUV scanner lithography is critical, but there still are many problems. In this situation, we have to find some keys to solve these problems to accommodate the narrow scope of the process margin and the printing bias control on wafer, as well as coarse lithography margins. Currently, the CD uniformity of the patterned Cr, or PSM features including the repaired mask patterns, is about +/- 0.03um. In next generation photomask production, there are some fundamental difficulties to overcome as; Firstly, there is the inherent physical behavior of DUV laser on quartz substrate, and secondly, there are photomask, defects that invisible to blue laser inspection, but can still be portioned onto the wafer. In order to keep up with photomask product requirements, the next generation inspection systems are being developed with i-line and KrF laser sources. However, issues such as low-level transmission defects and critical line-widths defects have not been solved yet. In part, the Ga+ implantation defect is one of these invisible transmission defects due to the fact that the carried inspection tools use a blue laser, so it is not counted as killing defect of the DUV transmitted types. Although it is captured into a false defect, we have a difficult to classify by ion implantation defect. This paper discusses the process margins of FIB Ga+ ion scanning on the opaque repairing of damaged quartz substrate. It will show the effects of reduced intensity or using the Gas Assisted Etching process. And though it has been solved somewhat, we also have to consider the CD control specifications for the next generation device such as 1G DRAM with DUV lithography. In this experiment, we have evaluated the printability of 4X DUV scanner after both opaque and clear defect repair with a focused ion beam (FIB) system. We also confirmed the accuracy of edge repair, implantation effects of each FIB machine and determined the topography of repair by AFM.
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