Electromagnetic control of convection in semiconductor melts: thermoelectromagnetic convection (TEMC) and rotating magnetic fields

Serhat Yesilyurt; Ljubomir Vjusic; Shariar Motakef

doi:10.1117/12.351270

6 July 1999 Electromagnetic control of convection in semiconductor melts: thermoelectromagnetic convection (TEMC) and rotating magnetic fields

Serhat Yesilyurt, Ljubomir Vjusic, Shariar Motakef

Author Affiliations +

Proceedings Volume 3792, Materials Research in Low Gravity II; (1999) https://doi.org/10.1117/12.351270
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Application of a low intensity axial magnetic field can promote significant convection during Bridgman growth of GeSi when resident thermoelectric currents at the growth interface are large due o difference of thermoelectric powers of the melt and of the crystal and the tangential temperature gradient at the interface. Thermoelectromagnetic convection (TEMC) in the GeSi melt is characterized by a meridional flow driven by the rotation of the fluid due to the azimuthal Lorentz force from currents in the radial direction, concentrated near the interface, and the axial magnetic field. A similar flow is caused by a rotating magnetic field (RMF). When the field is rotating sufficiently fast, a time-averaging azimuthal Lorentz force (almost uniform axially) causes a steady rotation of the melt, and an associated meridional convection (Ekman cells) near the interface. In this work, we developed a computational model to study convection of the GeSi melt in a microgravity environment in the presence of low intensity magnetic fields.

Citation Download Citation

Serhat Yesilyurt, Ljubomir Vjusic, and Shariar Motakef "Electromagnetic control of convection in semiconductor melts: thermoelectromagnetic convection (TEMC) and rotating magnetic fields", Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); https://doi.org/10.1117/12.351270

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