Paper
20 September 1999 Ceramics thin film formation for micromechanism and electronic device by ArF laser ablation
Masayuki Ikeda, Takashi Morino, Yoshimi Takahashi, Hayato Onodera
Author Affiliations +
Proceedings Volume 3822, Computer-Controlled Microshaping; (1999) https://doi.org/10.1117/12.364237
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Abstract
The film formation thinner than a few ten nano-meters, called ultra-thin films, has been the indispensable technology to develop various electronic devices. This paper describes the ultra-thin film forming process and properties of an Al2O3 film deposited mainly. The films of a few nano-meter thickness and nearly mono-atomic layer were formed by the excimer laser ablation. The ceramics film and multi-layer film were deposited on a Si wafer and a plate glass substrate at room temperature in the extremely high vacuum atmosphere. Surface roughness of the film was less than 1 nm and no defects of small holes and micro-cracks were found in the film of 2.6 nm thickness by measuring tunneling current at liquid N2 temperature.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Ikeda, Takashi Morino, Yoshimi Takahashi, and Hayato Onodera "Ceramics thin film formation for micromechanism and electronic device by ArF laser ablation", Proc. SPIE 3822, Computer-Controlled Microshaping, (20 September 1999); https://doi.org/10.1117/12.364237
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KEYWORDS
Ceramics

Laser ablation

Surface roughness

Electronic components

Thin films

Aluminum

Chemical species

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