Laser-induced formation of semiconductor films based on transition-metal silicides

Sergey A. Mulenko; Volodymyr S. Ovechko

doi:10.1117/12.364238

20 September 1999 Laser-induced formation of semiconductor films based on transition-metal silicides

Sergey A. Mulenko, Volodymyr S. Ovechko

Proceedings Volume 3822, Computer-Controlled Microshaping; (1999) https://doi.org/10.1117/12.364238
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany

Abstract

Two methods for the formation of semiconductor films were proposed: (1) laser chemical vapor deposition was based on the deposition of elements owing to the photodissociation of iron carbonyl (Fe(CO)₅) vapors while irradiating Si substrate surface with focused Ar⁺-laser radiation ((lambda) _L equals 488 nm) followed by focused YAG:Nd⁺³-laser radiation ((lambda) _L equals 1064 nm) treatment of the deposited film at the power density of 10⁵ W/cm² resulted in the formation of semiconductor phases: (beta) -iron disilicide ((beta) -FeSi₂) and silicon carbide (SiC) which formed carbide-silicide phase with such stoichiometric composition FeSi_2-XC_X and bandgap about 0.1 eV; (ii) electron beam sputtering was based on pure iron sputtering on Si substrate surface followed by focused YAG:Nd⁺³-laser radiation treatment of the deposited film at the power density ranging from 1.35 X 10⁵ W/cm² to 2.1 X 10⁵ W/cm² resulted in the formation of semiconductor phase ((beta) -SiFe₂) with maximum bandgap about 0.05 eV and metal phase ((alpha) -FeSi₂).

Citation Download Citation

Sergey A. Mulenko and Volodymyr S. Ovechko "Laser-induced formation of semiconductor films based on transition-metal silicides", Proc. SPIE 3822, Computer-Controlled Microshaping, (20 September 1999); https://doi.org/10.1117/12.364238

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