Effect of hydrogenation on the electrophysical properties of ion-doped GaAs

Valerii A. Kagadei; Yu V. Lilenko; Dmitrii I. Proskurovsky; L. S. Shirokova

doi:10.1117/12.360561

1 September 1999 Effect of hydrogenation on the electrophysical properties of ion-doped GaAs

Valerii A. Kagadei, Yu V. Lilenko, Dmitrii I. Proskurovsky, L. S. Shirokova

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360561
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

It has been established that hydrogenation in atomic hydrogen of ion-doped n⁺-n structures of semi- insulating GaAs suppresses the backgating effect. Modes of hydrogenation of structures in atomic hydrogen have been revealed which result in an increase in the rate of relaxation of photoconductivity of an n-n⁺-nⁱ structures and in a moderation of the bias voltage effect on the photoconductivity. Schottky-barrier transistors and integrated circuits based on hydrogenated structure show improved electrical characteristics. The effects observed seem to be conditioned by the processes of formation and decay of complexes of hydrogen with electrically active defects in GaAs.

Citation Download Citation

Valerii A. Kagadei, Yu V. Lilenko, Dmitrii I. Proskurovsky, and L. S. Shirokova "Effect of hydrogenation on the electrophysical properties of ion-doped GaAs", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360561

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