Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys

Yaroslav M. Olikh; Rada K. Savkina; Aleksandr I. Vlasenko

doi:10.1117/12.368415

4 November 1999 Acoustodynamic influence on electronic properties of Cd_xHg_1-xTe alloys

Yaroslav M. Olikh, Rada K. Savkina, Aleksandr I. Vlasenko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368415
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The results of the investigations of the transport properties of n- and p-Cd_xHg_1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-Cd_xHg_1-xTe at T < 120 K.

Citation Download Citation

Yaroslav M. Olikh, Rada K. Savkina, and Aleksandr I. Vlasenko "Acoustodynamic influence on electronic properties of Cd_xHg_1-xTe alloys", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368415

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available