Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE

Evgenie F. Venger; Yu. G. Sadof'ev; Galina N. Semenova; Nadezhda E. Korsunskaya; Vasily P. Klad'ko; B. Embergenov; Berdishukur R. Dzhumaev; L. V. Borkovskaya; Mikhail P. Semtsiv; M. Sharibaev

doi:10.1117/12.368350

4 November 1999 Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE

Evgenie F. Venger, Yu. G. Sadof'ev, Galina N. Semenova, Nadezhda E. Korsunskaya, Vasily P. Klad'ko, B. Embergenov, Berdishukur R. Dzhumaev, L. V. Borkovskaya, Mikhail P. Semtsiv, M. Sharibaev

Author Affiliations +

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368350
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

In this work we report the depth inhomogeneity study of MBE grown ZnSe, CdZnTe and ZnTe/(001) GaAs epilayers of different thickness by x-ray and depth resolved photoluminescence methods. Step etching and different wavelength excitation were used for this purpose. It is shown that all these epilayers consist of three regions with different extended defect and impurity concentrations: (i) near the interface one with high density of misfit dislocations and impurities concentration; (ii) the region with low extended defect and impurity concentration and (iii) near the top surface region with higher extended and point defect concentration. The deterioration of near top surface region increases with epilayer thickness. Influence of GaAs substrate preparation regimes on ZnSe layer growth and optical properties as well as the study of interdiffusion of Ga and Zn across the wafer-epilayer interface have been investigated. The possibility to use thin intermediate ZnTe layer with solid phase crystallization for blocking of the interdiffusion in ZnTe layers and improvement of epilayer photoluminescence characteristics have been explored.

Citation Download Citation

Evgenie F. Venger, Yu. G. Sadof'ev, Galina N. Semenova, Nadezhda E. Korsunskaya, Vasily P. Klad'ko, B. Embergenov, Berdishukur R. Dzhumaev, L. V. Borkovskaya, Mikhail P. Semtsiv, and M. Sharibaev "Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368350

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available