New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds

M. I. Dovgoshey; L. M. Durdinets; I. E. Kacher; Ja. V. Likhach; M. Yu. Rygan

doi:10.1117/12.368342

4 November 1999 New film materials for optoelectronics based on CdAl(Ga)₂S(Se)₄ compounds

M. I. Dovgoshey, L. M. Durdinets, I. E. Kacher, Ja. V. Likhach, M. Yu. Rygan

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368342
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)₂S(Se)₄ powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.

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M. I. Dovgoshey, L. M. Durdinets, I. E. Kacher, Ja. V. Likhach, and M. Yu. Rygan "New film materials for optoelectronics based on CdAl(Ga)₂S(Se)₄ compounds", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368342

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