Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii; Yu. A. Denisov; Andrej P. Kokhanenko

doi:10.1117/12.368354

4 November 1999 Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii, Yu. A. Denisov, Andrej P. Kokhanenko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368354
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg_1-xCd_xTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.

Citation Download Citation

Aleksander V. Voitsekhovskii, Yu. A. Denisov, and Andrej P. Kokhanenko "Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368354

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