Paper
14 July 2000 InP-based oxide-confined 1.6-μm microcavity light-emitting diodes
Weidong Zhou, Omar Qasaimeh, Pallab Bhattacharya
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Abstract
InP-based 1.6 micrometer microcavity light emitting diodes (MCLEDs) have been designed, fabricated and characterized. Oxide-confined MCLEDs with lateral aperture size down to 1 micrometer have been realized with enhanced output slope efficiency and excellent spectral and spatial properties. Both mirror-free cylindrical MCLEDs with oxide-aperture and 3D MCLEDs have been fabricated and a maximum output power of 0.03 mW at 30 mA for a 30 micrometer device has been realized. The effect of the aperture size on the slope efficiency and spatial properties have been systematically investigated, which shows an enhanced slope efficiency and narrower emission angle for small aperture size devices. The temperature dependent cavity properties have also been carefully examined for both the active region emission peak and cavity resonance peak.
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Weidong Zhou, Omar Qasaimeh, and Pallab Bhattacharya "InP-based oxide-confined 1.6-μm microcavity light-emitting diodes", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391411
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KEYWORDS
Optical microcavities

Light emitting diodes

Etching

Oxides

Indium gallium arsenide

Oxidation

Dielectrics

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