Simulation of carrier dynamics in multiple-quantum-well lasers

Mark S. Hybertsen; Muhammad A. Alam; Gene A. Baraff; R. Kent Smith; Gleb E. Shtengel; C. Lewis Reynolds Jr.; Gregory L. Belenky

doi:10.1117/12.391454

14 July 2000 Simulation of carrier dynamics in multiple-quantum-well lasers

Mark S. Hybertsen, Muhammad A. Alam, Gene A. Baraff, R. Kent Smith, Gleb E. Shtengel, C. Lewis Reynolds Jr., Gregory L. Belenky

Author Affiliations +

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391454
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We study the impact of carrier dynamics on the characteristics of InGaAsP/InP multi-quantum well lasers through detailed simulations and experiments. The device characteristics were simulated including carrier transport, capture of carriers into the quantum wells, quantum mechanical calculation of the levels and optical gain in the wells and solution for the optical mode. The simulations were self consistent for each value of device bias. The device characteristics studied include static light-current-voltage curves, dynamic small signal impedance and the small signal modulation of the light output. The comparison between simulation and experiment constrains the capture rate for these devices. The simulations suggest that the modulation response of these devices is not fundamentally limited by the carrier transport for the frequency range studied. The trends are understood in terms of sequential transport through the multi-quantum well active region.

Citation Download Citation

Mark S. Hybertsen, Muhammad A. Alam, Gene A. Baraff, R. Kent Smith, Gleb E. Shtengel, C. Lewis Reynolds Jr., and Gregory L. Belenky "Simulation of carrier dynamics in multiple-quantum-well lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391454

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