Contact hole size-reducing methods by using water-soluble organic over-coating material (WASOOM) as a barrier layer toward 0.15-um contact hole: resist flow technique I

Jun-Sung Chun; Shekhar Bakshi; Stanley Barnett; James Shih; Shih-Ked Lee

doi:10.1117/12.388347

23 June 2000 Contact hole size-reducing methods by using water-soluble organic over-coating material (WASOOM) as a barrier layer toward 0.15-μm contact hole: resist flow technique I

Jun-Sung Chun, Shekhar Bakshi, Stanley Barnett, James Shih, Shih-Ked Lee

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388347
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In our experiment for 0.15 micrometer contact hole, we used Water-soluble organic overcoating material (WASOOM) as a barrier layer. Since WASOOM is water soluble, after baking for resist flow, water rinse will remove it completely. The key point of resist flow technique is to reduce overhang, in other words, reducing thermal stress at the top and bottom of resist pattern by WASOOM can lead to well-controlled DICD. Since WASOOM is water soluble and very compatible with resist, during resist flow, it is assumed that it will be acting as a barrier layer so that overhang should be reduced. In this paper we will describe below 0.2 micrometer contact hole pattern without overhang profile, well controlled DICD and fine etch profile. And also 0.15 micrometer contact hole patterning method will be described with half tone + resist flow by WASOOM. And also we will describe the application of SOG (Spin On Glass) for removing top flare after resist baking.

Citation Download Citation

Jun-Sung Chun, Shekhar Bakshi, Stanley Barnett, James Shih, and Shih-Ked Lee "Contact hole size-reducing methods by using water-soluble organic over-coating material (WASOOM) as a barrier layer toward 0.15-μm contact hole: resist flow technique I", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388347

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