Paper
23 June 2000 Mechanism of single-layer 193-nm dissolution inhibition resist
Zhenglin Yan, Francis M. Houlihan, Elsa Reichmanis, Omkaram Nalamasu, Arnost Reiser, Gary Dabbagh, Richard S. Hutton, Dan Osei, Jose Sousa, Kevin J. Bolan
Author Affiliations +
Abstract
We have found that the progress of developer base into films of terpolymers of norbornene (NB)-maleic anhydride (MA) and acrylic acid (AA) is a percolation process with a critical site concentration of x(c) equals 0.084 which suggests that every acrylic acid site in the terpolymer of norbornene-maleic anhydride-acrylic acid can make 12 monomer units of the polymer water compatible. In practice these systems are being used with various tert-butyl esters of cholic acid as dissolution inhibitors. The cholates differ very much in their dissolution inhibition factors (lowest t-butyl cholate (1.3) to highest t-butyl lithocholate glutarate dimer (7.4). The change in these factors corrected for molarity follow the hydrophobic character of the dissolution as measured by log(p). A quick screening method has also been established to evaluate dissolution inhibitors based on our observation that the cloud point (the volume % acetone in a water/acetone which gives persistent cloudiness) parallels the dissolution inhibiting power as measured by the dissolution inhibition factor. For dissolution promotion, optimal results are obtained with t-butyl 1,3,5-cyclohexanetricarboxylate (f equals -6.3) and poorest results with t-butyl lithocholate (f equals -2.8); this appears to track with the number of carboxyl groups and the hydrophobicity of the carboxylic acids. The Rmax found for resist formulations tracks well with these findings. Another factor in determining the ultimate achievable contrast is the degree of acidolytic deprotection achieved by the material. It appears that acidolyticaly cleaveable carboxylate esters with a higher concentration of electron withdrawing groups such as t-butyl 1,3,5-cyclohexanetricarboxylate are more effective.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhenglin Yan, Francis M. Houlihan, Elsa Reichmanis, Omkaram Nalamasu, Arnost Reiser, Gary Dabbagh, Richard S. Hutton, Dan Osei, Jose Sousa, and Kevin J. Bolan "Mechanism of single-layer 193-nm dissolution inhibition resist", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388275
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KEYWORDS
Ions

Polymers

Clouds

Polymer thin films

Switches

Medium wave

Hydrogen

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