Paper
6 September 2000 Effects of cooling rates on the crystal orientation of sputtered Pb-Ti-O thin films
Ryuta Ai, Hiroaki Ito, Goh Asayama, Yoko Ichikawa, Kiyotaka Wasa
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Abstract
Thin films of Pb-Ti-O families, PbTiO3 (PT) and (Pb,La)TiO3 (PLT), were grown at 600 degree(s)C on (100)MgO substrates by rf- magnetron sputtering at various cooling rates (3 degree(s)C/min to 33 degree(s)C/min). It is found that c-axis orientation of the PT thin films was enhanced by the increase of the cooling rates and the a- axis orientation of PT thin films was enhanced by the decrease of the cooling rates. While, c-axis orientation of the PLT thin films was achieved independent of the cooling rates. The growth mechanism of the a-axis orientation of PT thin films will be governed by an epitaxial growth and the c-axis orientation will be caused by the preferred orientation. The cooling rates are essential for the control of the orientation of PT thin films on (100)MgO substrates.
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Ryuta Ai, Hiroaki Ito, Goh Asayama, Yoko Ichikawa, and Kiyotaka Wasa "Effects of cooling rates on the crystal orientation of sputtered Pb-Ti-O thin films", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); https://doi.org/10.1117/12.397861
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Cited by 6 scholarly publications.
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KEYWORDS
Thin films

Sputter deposition

Dielectrics

Thin film devices

Scanning electron microscopy

Chemical analysis

Crystals

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