Paper
6 November 2000 Fabrication of Ce:YIG film for electric and magnetic field sensor by pulsed-laser deposition and laser-induced forward transfer
Yoshiki Nakata, Yuko Tashiro, Tatsuo Okada, Mitsuo Maeda, Sadao Higuchi, Kiyotaka Ueda
Author Affiliations +
Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405725
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
Ce-doped yttrium iron garnet (Ce:YIG) thin films were deposited for the first time by pulsed-laser deposition (PLD) on gadolinium gallium garnet (GGG(111)) substrates. Well crystallized film was obtained at high substrate temperature (approximately 900 degree(s)C) and in low Ar gas pressure (approximately 50 mtorr). A Faraday rotation angle was wavelength dependent, and the largest value was 4.2 x 104 deg/cm at 420 nm. The control of the charge state of Ce ion is necessary for crystallization. The deposited Ce:YIG films were transferred by laser-induced forward transfer (LIFT) process to obtain a thick film.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiki Nakata, Yuko Tashiro, Tatsuo Okada, Mitsuo Maeda, Sadao Higuchi, and Kiyotaka Ueda "Fabrication of Ce:YIG film for electric and magnetic field sensor by pulsed-laser deposition and laser-induced forward transfer", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405725
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KEYWORDS
Crystals

Thin films

Argon

Cerium

Transmittance

Oxygen

Thin film deposition

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