Laser joining of microcomponents with fiber lasers and diode lasers

Arnold Gillner; Luedger Bosse; Thorsten Kramer; Alexander M. Olowinsky; M. Wild

doi:10.1117/12.405715

6 November 2000 Laser joining of microcomponents with fiber lasers and diode lasers

Arnold Gillner, Luedger Bosse, Thorsten Kramer, Alexander M. Olowinsky, M. Wild

Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405715
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan

Abstract

The production of microsystems and miniaturized devices often requires joining technologies, which meet the demands of ultra clean manufacturing. Especially for optical and medical products low pollution and distortion joining processes are necessary to guarantee the quality and the function of the device. For this applications laser welding with fiber lasers at laser powers of up to P = 10 W and focus dimensions < 30 micrometers have been used for welding micro mechanical devices. At intensities I > 10⁶W/cm² welding depths of 100 micrometers can be achieved with minimized pollution of the parts and smooth and clean appearance of the surface of the welds. For joining polymers and dissimilar materials high power diode lasers have been used providing even better conditions regarding pollution of the joining partners. By using material adapted laser wavelengths the heating of the material can be concentrated to the inner joining area of an overlap material joint. With this technique, thermoplastic polymer compounds and silicon glass compounds have been joined with low temperature and no influence on the quality of the parts with joining widths of less that 100 micrometers .

Citation Download Citation

Arnold Gillner, Luedger Bosse, Thorsten Kramer, Alexander M. Olowinsky, and M. Wild "Laser joining of microcomponents with fiber lasers and diode lasers", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405715

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