High-density frequency domain storage in alkaline earth sulfides double doped with lanthanide

Mohamed F. Aly; Levent Biyikli; Sameh Ibrahim Dardona; Zameer U. Hasan

doi:10.1117/12.408564

29 November 2000 High-density frequency domain storage in alkaline earth sulfides double doped with lanthanide

Mohamed F. Aly, Levent Biyikli, Sameh Ibrahim Dardona, Zameer U. Hasan

Proceedings Volume 4114, Photonic Devices and Algorithms for Computing II; (2000) https://doi.org/10.1117/12.408564
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Previously we have reported the largest number of photon- gated spectral holes ever burned in a solid. This has interest in their applications in optical storage. However, multiple holeburning in MgS:Eu resulted in noticeable erasure of the previously burned holes. This was attributed to the mechanism of holeburning in this material where both Eu²⁺ and Eu³⁺ are stable ions. In gated holeburning, Eu²⁺ ions are ionized. Eu³⁺ that form deep traps, capture the electrons generated during the holeburning and are converted to Eu²⁺. The Zero Phonon Line (ZPL) of these newly formed Eu²⁺ ions are randomly distributed across the inhomogeneous line causing a partial erasure of the holes burned earlier. This reduces the efficiency of holeburning. Co-doping of MgS:Eu and CaS:Eu with different rare earth (RE) ions has been investigated to provide deep electron traps other than Eu³⁺. Furthermore, co-doping provides the opportunity to burn holes in multiple ZPLs belonging to different REs, thus increasing the storage density many folds.

Citation Download Citation

Mohamed F. Aly, Levent Biyikli, Sameh Ibrahim Dardona, and Zameer U. Hasan "High-density frequency domain storage in alkaline earth sulfides double doped with lanthanide", Proc. SPIE 4114, Photonic Devices and Algorithms for Computing II, (29 November 2000); https://doi.org/10.1117/12.408564

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