Paper
23 August 2000 Photo-developing defect and developing-like defect on DUV process
H. M. Sheng, Chen-Cheng Kuoe, L. G. Terng, Dong S. Cheng, Yung H. Liao
Author Affiliations +
Abstract
Three types of photo developing and developing-like defect on DUV process were presented in this paper. Scumming of photoresist on nitride film during developing process which was resulted from interaction between by-product of nitride film deposition process and resists that could not be removed by developer and water rinse. Those scumming developing defect would lead to bamboo shoots-like residue after etching that could cause microscratch during STI CMP. Either film treatment with HF vapor clean before photoprocess or adding extra rinse after hard baking can effectively eliminate those scumming defect. Splash from developer cup during water rinse process which appearance on non- resist area were crown-like on hydrophobic film could be reduced by extra rinse process after hard baking. Also owing to high contact angle between surfactant type developer and resist, discolor appearance on resist are would be formed after developing. Method to solve this issue was to apply developer as pre-wet before developing process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. M. Sheng, Chen-Cheng Kuoe, L. G. Terng, Dong S. Cheng, and Yung H. Liao "Photo-developing defect and developing-like defect on DUV process", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410099
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KEYWORDS
Photoresist processing

Deep ultraviolet

Semiconducting wafers

Etching

Silicon

Silicon films

Liquids

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