Paper
20 October 2000 Effect of electrostatic field on photoresist coating uniformity
Author Affiliations +
Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404845
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
As the critical feature decreases below 0.25micrometers in the manufacture of integrated circuits, the control of photoresist coating uniformity becomes more critical to the overall critical dimension control. Normally, the thickness uniformity of photoresist coated by spinning is mainly affected by resist viscosity, solvent evaporation rate, dispense speed, exhaust humidity, wind speed and resist (substrate) temperature. However what we observed on our manufacturing line revealed that electrostatic field induced by piezocrystal also impacted on thickness uniformity of photoresist. Two possible explanations of this phenomena will be given in this paper. Though there is still not final solution to this problem, we propose track and resist designer to take this issue into consideration to improve the photoresist spin coating uniformity.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenzhan Zhou "Effect of electrostatic field on photoresist coating uniformity", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404845
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KEYWORDS
Photoresist materials

Semiconducting wafers

Thin film coatings

Coating

Silicon

Control systems

Lithography

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