New 2D to 3D x-ray lithography technology for grayscale structures

Vladimir A. Kudryashov; Sing Lee

doi:10.1117/12.404857

20 October 2000 New 2D to 3D x-ray lithography technology for grayscale structures

Vladimir A. Kudryashov, Sing Lee

Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404857
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

A new 2D to 3D volumetric technology for gray scale structures production developed originally for e-beam lithography is successfully extended to x-ray lithography. Based on the binary nature of the lithography process, this technology demonstrates much higher process latitude and a possibility of 20 to 40 different height resist structures formation in a relatively thick resist layer. A 2-dimensional binary resist structure with a specially designed topology produced by a constant dose exposure and development can be transformed into a 3- dimensional one by resist reflowing during baking at a temperature higher then the glassing one for this resist.

Citation Download Citation

Vladimir A. Kudryashov and Sing Lee "New 2D to 3D x-ray lithography technology for grayscale structures", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404857

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