Paper
23 April 2001 Femtosecond pump-probe spectroscopy of a highly excited GaN epilayer
Chan-Kyung Choi, Yong Hwang Kwon, Jerzy S. Krasinski, Gil-Han Park, Girish Setlur, Jin-Joo Song, Yia-Chung Chang
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Abstract
The non-equilibrium carrier dynamics in GaN epilayer for carrier densities ranging from 4 X 1017 to 1019 cm-3 at 10 K was studied by femtosecond pump-probe transmission spectroscopy. Spectral hole burning was initially peaked roughly at the excitation energy for an estimated carrier density of 4 X 1018 cm-3 and gradually redshifted during the excitation. Because of reduced carrier-carrier and carrier-phonon scattering, a very slow energy relaxation of the hot carriers at these densities were observed. We show that the hot carriers were strongly confined in a non-thermal distribution and they relaxed collectively to the band edge.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chan-Kyung Choi, Yong Hwang Kwon, Jerzy S. Krasinski, Gil-Han Park, Girish Setlur, Jin-Joo Song, and Yia-Chung Chang "Femtosecond pump-probe spectroscopy of a highly excited GaN epilayer", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424723
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KEYWORDS
Scattering

Gallium nitride

Absorption

Excitons

Picosecond phenomena

Spectroscopy

Phonons

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