Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells

Bjoern Rau; P. Waltereit; Oliver Brandt; A. Trampert; Klaus H. Ploog; Joachim Puls; Fritz Henneberger

doi:10.1117/12.432555

9 July 2001 Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells

Bjoern Rau, P. Waltereit, Oliver Brandt, A. Trampert, Klaus H. Ploog, Joachim Puls, Fritz Henneberger

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432555
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Using 6H-SiC(0001) and (gamma) -LiAlO₂(100) substrates, identically designed GaN/(Al,Ga)N heterostructures with (C- plane)- and (M-plane)-orientation, respectively, are grown by plasma-assisted molecular beam epitaxy. The latter case is of special interest, because such structures with the hetero-interface parallel to the hexagonal c-axis are free of electrostatic fields. This fact leads to distinct differences in the spontaneous emission. While the photoluminescence from the conventional oriented wells is unpolarized, a strong polarization anisotropy of over 90 percent is observed for the M-plane sample. The data are in excellent agreement with the expectations from the known valence band structure of wurzite GaN, taking into account a confinement induced admixture of the different subvalence bands in the M-plane quantum well. Secondly, a distinctly enhanced recombination rate in the electrostatic-field free M-plane sample with respect to the C-plane MQW is seen in time-resolved photoluminescence studies proving the increased electron-hole overlap in the M-plane case. Photoluminescence studies at high excitation densities are carried out to uncover the physical gain mechanism for both kinds of heterostructures.

Citation Download Citation

Bjoern Rau, P. Waltereit, Oliver Brandt, A. Trampert, Klaus H. Ploog, Joachim Puls, and Fritz Henneberger "Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432555

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Polarization

Gallium nitride

Quantum wells

Luminescence

Heterojunctions

Absorption

Excitons

Show All Keywords

Keywords/Phrases

Search In:

Publication Years