Paper
9 July 2001 Femtosecond pulse propagation in cryogenic GaAs waveguides
Author Affiliations +
Abstract
High-speed optoelectronic devices must be interconnected with optical waveguides. Furthermore, it is quite likely that optical waveguides will be required to interface with superconducting devices that operate at cryogenic temperatures. Thus, it is important to examine femtosecond pulse propagation in cryogenic waveguides. Our approach uses the time domain susceptibility by Fourier transforming frequency domain models of semiconductors developed by Adachi. The resulting time domain susceptibility functions are closed form and cover the temperature range from 0 to 800 K. With this new model, time domain solutions to Maxwell's equations are now obtained for a femtosecond pulse propagating in a GaAs waveguide. The effects of linear dispersion and attenuation are examined for waveguides at different temperatures. However, the solution is limited to one spatial dimension in the direction of propagation to simplify the numerical algorithm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raymond M. Sova, Richard I. Joseph, and Michael E. Thomas "Femtosecond pulse propagation in cryogenic GaAs waveguides", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432615
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KEYWORDS
Gallium arsenide

Wave propagation

Finite-difference time-domain method

Waveguides

Instrument modeling

Cryogenics

Data modeling

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