Optimization of the barrier height in 1.3-um InGaAsP multiple-quantum-well active regions for high-temperature operation

Sebastian Mogg; Joachim Piprek

doi:10.1117/12.432569

9 July 2001 Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation

Sebastian Mogg, Joachim Piprek

Author Affiliations +

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432569
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We present a study of barrier height effects on the high-temperature performance of 1.3 micron strained layer InGaAsP/InP quantum well lasers. Broad-area Fabry-Perot lasers were fabricated and their light-current characteristics were measured at temperatures between 20 degrees C and 80 degrees C. Based on our experimental results we analyze the effect of the barrier bandgap using the commercial laser simulation software LASTIP. The simulator calculates all relevant physical mechanisms, including their dependence on temperature and local carrier density, self-consistently. The strained quantum-well optical gain computation is based on the 4 x 4 kp method considering valence-band mixing effects. A drift-diffusion model including thermionic emission at hetero-interfaces is used for the calculation of the carrier transport. Careful adjustments of material parameters, in agreement with data reported in the literature, are performed in order to reproduce the measurements. Lowering the barrier height in the active region leads to an improved performance of our laser with respect to threshold current and slope efficiency. An optimum barrier bandgap range of 1.21 - 1.24 eV is identified for our laser. This is partially attributed to the non-uniform carrier-distribution across the quantum-wells.

Citation Download Citation

Sebastian Mogg and Joachim Piprek "Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432569

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available