GaN deep-level capture barriers

Daniel K. Johnstone; Mohamad Ahoujja; YungKee Yeo; Louis J. Guido

doi:10.1117/12.429408

12 June 2001 GaN deep-level capture barriers

Daniel K. Johnstone, Mohamad Ahoujja, YungKee Yeo, Louis J. Guido

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429408
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

One of the unique properties of GaN is the polarizability. Also, demonstration of luminescent properties in devices such as light emitting diodes and lasers has been surprising, considering the defect density. The large polarization and inactive defects may be related, as demonstrated here by the measurement of several barriers to electron capture. N-type samples grown by both MOCVD and RMBE showed two adjacent DLTS peaks at 125 - 150 K with energies of 0.190 eV and 0.253 eV and one larger peak at 300 K. The 300 K peak was resolved to two traps, one with emission energy of 0.548 eV in both samples, and one with emission energy of 0.613 eV in the GaN grown by MOCVD. Analysis of the change in amplitude of the emission transients under non-saturating filling pulse conditions gives insight to the capture behavior. The two traps at 300 K have coupled trapping and emission characteristics. Both the rate window plots and the fit of the capacitance transient amplitude showed several traps with barriers to capture of electrons at 0.1 eV, 0.04 eV, 0.14 eV, and 0.38 eV. The capture barriers may be related to the shift in core electrons on ions surrounding the defect.

Citation Download Citation

Daniel K. Johnstone, Mohamad Ahoujja, YungKee Yeo, and Louis J. Guido "GaN deep-level capture barriers", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429408

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