Paper
20 April 2001 Stepper lens field critical dimension uniformity and optical proximity correction
Author Affiliations +
Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425244
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Rule tables for describing optical proximity correction can be derived either from practical measurements or by means of lithography simulation. This paper shows that one set of rules may not adequately apply across the whole of the image field depending on CD uniformity across the lens field. Example measurements illustrate the problem and proposals are made for its solution.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin "Stepper lens field critical dimension uniformity and optical proximity correction", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425244
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KEYWORDS
Optical proximity correction

Lithography

Reticles

Critical dimension metrology

Manufacturing

Semiconducting wafers

Image processing

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