Recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing processes

David J. Stein; Dale L. Hetherington

doi:10.1117/12.425261

23 April 2001 Recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing processes

David J. Stein, Dale L. Hetherington

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425261
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

We present a summary of the recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing (CMP) processes. We discuss the technical challenges and review some of the approaches that have been published and/or patented. These methods include optical, thermal (pad temperature), friction (torque motor current), electrochemical, chemical, electrical, and acoustic (vibration). We also present experimental data obtained in our laboratory using selected endpoint methods for metal and oxide CMP.

Citation Download Citation

David J. Stein and Dale L. Hetherington "Recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing processes", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425261

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