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A surface micromachined miniature switch has been made on silicon substrate using an electroplated gold micro-beam as the cantilevered arm, a chromium-to-gold electrical contact, and electrostatic actuation as the switching mechanism. The switch has an electrical isolation of -30dB in the 'off' state and an insertion loss of 4-7dB form 1 to 10 Ghz with a return loss of -15dB in the 'on' state. The high insertion loss has attributed to generation of parasitic current in low resistivity of the silicon substrate.
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