Paper
29 June 2001 Radiation damping in dielectronic recombination of CIV
V. Stancalie, P. G. Burke, V. M. Burke
Author Affiliations +
Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432801
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
Abstract
Radiation damping effect in dielectronic recombination (DR) of CIV is analysed by applying the ab initio, fully nonperturbative R-matrix Floquet theory and its extension to laser induced degenerate states phenomenon. The autoionizing and excited Rydberg states of the complex ion, which are resonantly coupled by the radiation field, are characterized in a Floquet approach by complex quasienergies. By varying the laser intensity and frequency, with overlapping resonances, the interference terms in the expression for dielectronic recombination probability are directly obtained from the calculation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Stancalie, P. G. Burke, and V. M. Burke "Radiation damping in dielectronic recombination of CIV", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432801
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KEYWORDS
Ions

Laser induced damage

Electrons

Ionization

Radiation effects

Chemical species

Probability theory

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